Structure for a through-silicon-via on-chip passive MMW bandpass filter

US8120145B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Amit Bavisi · Tempe, US
• Hanyi Ding · Colchester, US
• Guoan Wang · South Burlington, US
• Wayne H. Woods, Jr. · Burlington, US
• Jiansheng Xu · Londonderry, GB

Key dates

• Filing date: Jun 17, 2008
• Grant date: Feb 21, 2012
• Expiry date: Sep 20, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01P1/20363
• WIPO field: Telecommunications
• WIPO sector: Electrical engineering

Abstract

A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a substrate including a silicon layer. Furthermore, the design structure includes a metal layer on a bottom side of the silicon layer and a dielectric layer on a top side of the silicon layer. Additionally, the design structure includes a top-side interconnect of the through-silicon via bandpass filter on a surface of the dielectric layer and a plurality of contacts in the dielectric layer in contact with the top-side interconnect. Further, the design structure includes a plurality of through-silicon vias through the substrate and in contact with the plurality of contacts, respectively, and the metal layer.