Data writing method for magnetoresistive effect element and magnetic memory
US8120948B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2009 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Jun 5, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A data writing method for a magnetoresistive effect element of an aspect of the present invention including generating a write current in which a falling period from the start of a falling edge to the end of the falling edge is longer than a rising period from the start of a rising edge to the end of the rising edge, and flowing the write current through the magnetoresistive effect element which comprises a first magnetic layer having an invariable magnetizing direction, a second magnetic layer having a variable magnetizing direction, and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer, to change the magnetizing direction of the second magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.