Semiconductor device
US8120950B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2009 |
| Grant date | Feb 21, 2012 |
| Priority date | — |
| Expiry date | Mar 5, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C19/0808
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a first magnetic random access memory including a first memory cell and a second magnetic random access memory including a second memory cell operating at higher speed than the first memory cell and is provided on the same chip together with the first magnetic random access memory. The first memory cell is a current-induced domain wall motion type MRAM and stores data based on a domain wall position of a magnetization free layer. A layer that a write current flows is different from a layer that a read current flows. The second memory cell is a current-induced magnetic field writing type MRAM and stores data based on a magnetic field induced by a write current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.