Patent · US Active

Nanocrystal structures

US8121162B2 · kind B2 · utility

1Cited by

32References

9Claims

0Family size

Assignee

Massachusetts Institute of Technology · US

Inventors

Hans J. Eisler · Weingarten, DE
Vikram Sundar · Stoneham, US
Michael E. Walsh · Everett, US
Victor I. Klimov · Los Alamos, US
Moungi G. Bawendi · Cambridge, US
Henry I. Smith · Sudbury, US

Key dates

Filing date	Nov 21, 2008
Grant date	Feb 21, 2012
Priority date	—
Expiry date	Jan 8, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/31678
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.