Patent · US Active

Method for producing a semiconductor component and a semiconductor component produced according to the method

US8123963B2 · kind B2 · utility

3Cited by

13References

23Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Hubert Benzel · Neckartenzlingen, DE
Heribert Weber · Leverkusen, DE
Hans Artmann · Magstadt, DE
Frank Schaefer · Lörrach, DE

Key dates

Filing date	May 12, 2008
Grant date	Feb 28, 2012
Priority date	—
Expiry date	Jul 8, 2030

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81C2201/0115
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A method for producing a semiconductor component includes forming an n-doped layer in a p-doped layer of the semiconductor component, wherein the n-doped layer comprises at least one of: a sieve-like layer or a network-like layer. The method also includes porously etching the p-doped layer between the material of the n-doped layer to form a top electrode, and forming a cavity below the n-doped layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.