Semiconductor lithography process
US8124319B2 · kind B2 · utility
4Cited by
1References
16Claims
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Key dates
| Filing date | Apr 12, 2010 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Sep 10, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor lithography process. A photoresist film is coated on a substrate. The photoresist film is subjected to a flood exposure to blanket expose the photoresist film across the substrate to a first radiation with a relatively lower dosage. The photoresist film is then subjected to a main exposure using a photomask to expose the photoresist film in a step and scan manner to a second radiation with a relatively higher dosage. After baking, the photoresist film is developed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.