Tunnel junction via
US8124426B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 6, 2010 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Jan 6, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/979
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a tunnel junction (TJ) circuit, the method includes forming a bottom wiring layer; forming a plurality of TJs contacting the bottom wiring layer; forming a plurality of tunnel junction vias (TJVs) simultaneously with the formation of the plurality of TJs, the TJVs contacting the bottom wiring layer; and forming a top wiring layer contacting the plurality of TJs and the plurality of TJVs. A circuit comprising a plurality of tunnel junctions (TJs) includes a bottom wiring layer contacting the plurality of TJs, the bottom wiring layer further contacting a plurality of tunnel junction vias (TJVs), wherein the plurality of TJs and the plurality of TJVs comprise the same material; and a top wiring layer contacting the plurality of TJs and the plurality of TJVs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.