Solid-state imaging device and method for making the same, and manufacturing substrate for solid-state imaging device
US8124440B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2009 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Mar 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/199
Abstract
A method for making a solid-state imaging device includes forming a pinning layer, which is a P-type semiconductor layer or an N-type semiconductor layer, on a first substrate by deposition; forming a semiconductor layer on the pinning layer; forming a photoelectric conversion unit in the semiconductor layer, the photoelectric conversion unit being configured to convert incident light into an electrical signal; forming, on the semiconductor layer, a transistor of a pixel unit and a transistor of a peripheral circuit unit disposed in the periphery of the pixel unit, and then forming a wiring section on the semiconductor layer; bonding a second substrate on the wiring section; and removing the first substrate after the second substrate is bonded.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.