Programmable resistive memory cell with filament placement structure
US8124952B2 · kind B2 · utility
0Cited by
7References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 27, 2011 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Jan 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact has a filament placement structure thereon extending into the ion conductor material. In some embodiments, the second metal contact also has a filament placement structure thereon extending into the ion conductor material toward the first filament placement structure. The filament placement structure may have a height of at least about 2 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.