Inventor · Anyang-si, KR

Jaewoo Nam

5Patents
3h-index
9Co-inventors
42Inventor score

Filing activity: Nov 3, 2008 → Mar 20, 2014

Most-cited inventions

PatentTitleAreaCited byStatus
US7897955B2 Programmable resistive memory cell with filament placement structure Electricity 15 Active
US8846305B2 Photolithography method including dual development process Physics 4 Active
US8124441B2 Programmable resistive memory cell with filament placement structure Electricity 4 Active
US9564324B2 Methods of forming a pattern and devices formed by the same Electricity 0 Active
US8124952B2 Programmable resistive memory cell with filament placement structure Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.