Single electron transistor
US8124961B2 · kind B2 · utility
9Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2011 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Jun 3, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A single electron transistor includes source/drain layers disposed apart on a substrate, at least one nanowire channel connecting the source/drain layers, a plurality of oxide channel areas in the nanowire channel, the oxide channel areas insulating at least one portion of the nanowire channel, a quantum dot in the portion of the nanowire channel insulated by the plurality of oxide channel areas, and a gate electrode surrounding the quantum dot.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.