Semiconductor light emitting device and method for manufacturing the same
US8124985B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2006 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Aug 9, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/856
Abstract
There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion (6) including a first conductivity type layer and a second conductivity type layer, made of nitride semiconductor, is provided on a surface of the substrate (1) made of, for example, sapphire or the like. A first electrode (for example, p-side electrode (8)) is provided electrically connected to the first conductivity type layer (for example, p-type layer (5)) on a surface side of the semiconductor lamination portion (6), and a second electrode (for example, n-side electrode (9)) is provided electrically connected to the second conductivity type layer (for example, n-type layer (3)). A part of the semiconductor lamination portion (6) is removed at a surrounding region of a chip of the semiconductor lamination portion (6) by etching so that column portions (6a) stand side by side by leaving the semiconductor lamination portion without etc…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.