Fabrication of mesoscopic lorentz magnetoresistive structures
US8125742B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Sep 18, 2007 |
| Grant date | Feb 28, 2012 |
| Priority date | — |
| Expiry date | Dec 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A Lorentz Magnetoresistive sensor having an extremely small lead width and lead spacing is disclosed. The sensor can be constructed by a novel fabrication method that allows the leads to be deposited in such a manner that lead width and spacing between the leads is determined by the as deposited thicknesses of the lead layers and electrically insulating spacer layers between the leads rather than by photolithography. Because the lead thicknesses and lead spacings are not defined photolithograhically, the lead thickness and lead spacing are not limited by photolithographic resolution limits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.