Technique for the growth of planar semi-polar gallium nitride
US8128756B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Feb 1, 2010 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Mar 8, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/938
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13 } gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.