Patent · US Active

Solid state lighting devices and associated methods of manufacturing

US8129205B2 · kind B2 · utility

26Cited by

1References

16Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Niraj Rana · Boise, US
Zaiyuan Ren · Boise, US

Key dates

Filing date	Jan 25, 2010
Grant date	Mar 6, 2012
Priority date	—
Expiry date	Jan 25, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/821
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (GaN) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (InGaN) material directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.