Method of fabricating two-step self-aligned contact
US8129235B2 · kind B2 · utility
10Cited by
7References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2007 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Dec 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a self-aligned contact is provided. A first dielectric layer is formed on a substrate having a contact region therein. Next, a lower hole corresponding to the contact region is formed in the first dielectric layer. Thereafter, a second dielectric layer is formed on the first dielectric layer, and then an upper hole self-aligned to and communicated with the lower hole is formed in the second dielectric layer, wherein the upper hole and the lower hole constitute a self-aligned contact hole. Afterwards, the self-aligned contact hole is filled with a conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.