Patent · US Active

Advanced CMOS using super steep retrograde wells

US8129246B2 · kind B2 · utility

119Cited by

9References

1Claims

0Family size

Assignee

TEXAS INSTRUMENTS INCORPORATED · US

Inventors

Jeffrey A. Babcock · Neufahrn, DE
Angelo Pinto · Augusta, IT
Scott Balster · Dallas, US
Alfred Haeusler · Freising, DE
Gregory E. Howard · Dallas, US

Key dates

Filing date	Jan 13, 2011
Grant date	Mar 6, 2012
Priority date	—
Expiry date	Jan 13, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/60
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.