Alpha particle blocking wire structure and method fabricating same
US8129267B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2008 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Dec 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15787
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An alpha particle blocking structure and method of making the structure. The structure includes: a semiconductor substrate; a set of interlevel dielectric layers stacked from a lowermost interlevel dielectric layer closest to the substrate to a uppermost interlevel dielectric layer furthest from the substrate, each interlevel dielectric layer of the set of interlevel dielectric layers including electrically conductive wires, top surfaces of the wires substantially coplanar with top surfaces of corresponding interlevel dielectric layers; an electrically conductive tot final pad contacting a wire pad of the uppermost interlevel dielectric layer; an electrically conductive plating base layer contacting a top surface of the terminal pad; and a copper block on the plating base layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.