Method of machining wafer
US8129277B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2008 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Jan 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of machining a wafer in which, at the time of grinding the back-side surface of the wafer, only a back-side surface region corresponding to a device formation region where semiconductor chips are formed is thinned by grinding, to form a recessed part on the back side of the wafer. An annular projected part surrounding the recessed part is utilized to secure rigidity of the wafer. Next, the recessed part is etched to cause metallic electrodes to project from the bottom surface of the recessed part, thereby forming a back-side electrode parts, then an insulating film is formed in the recessed part, and the insulating film and end surfaces of the back-side electrode parts are cut.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.