Chemical mechanical polish process control for improvement in within-wafer thickness uniformity
US8129279B2 · kind B2 · utility
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4References
22Claims
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Key dates
| Filing date | Oct 13, 2008 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Jul 29, 2030 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B49/12
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of performing chemical mechanical polish (CMP) processes on a wafer includes providing the wafer; determining a thickness profile of a feature on a surface of the wafer; and, after the step of determining the thickness profile, performing a high-rate CMP process on the feature using a polish recipe to substantially achieve a within-wafer thickness uniformity of the feature. The polish recipe is determined based on the thickness profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.