Nonvolatile memory device and method of manufacturing the same
US8129705B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2009 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Oct 28, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/90
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a nonvolatile memory device including a phase-change memory configured with cross-point memory cells in which memory elements formed of a phase-change material and selection elements formed with a diode are combined. A memory cell is configured with a memory element formed of a phase-change material and a selection element formed with a diode having a stacked structure of a first polycrystalline silicon film, a second polycrystalline silicon film, and a third polycrystalline silicon film. The memory cells are arranged at intersection points of a plurality of first metal wirings extending along a first direction with a plurality of third metal wirings extending along a second direction orthogonal to the first direction. An interlayer film is formed between adjacent selection elements and between adjacent memory elements, and voids are formed in the interlayer film provided between the adjacent memory elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.