Inventor · Tokyo, JP

Norikatsu Takaura

49Patents
14h-index
47Co-inventors
77Inventor score

Filing activity: Jun 27, 2001 → Sep 17, 2015

Most-cited inventions

PatentTitleAreaCited byStatus
US7864568B2 Semiconductor storage device Physics 216 Active
US7126149B2 Phase change memory and phase change recording medium Electricity 147 Expired
US7123535B2 Semiconductor integrated circuit device Physics 65 Expired
US6670642B2 Semiconductor memory device using vertical-channel transistors Electricity 56 Expired
US7489552B2 Semiconductor integrated circuit device Physics 56 Active
US7071485B2 Semiconductor integrated circuit device Electricity 37 Expired
US7098478B2 Semiconductor memory device using vertical-channel transistors Electricity 26 Expired
US7443721B2 Semiconductor integrated device Physics 24 Active
US8169819B2 Semiconductor storage device Physics 22 Active
US8129705B2 Nonvolatile memory device and method of manufacturing the same Emerging Cross-Sectional Technologies 20 Active
US7154788B2 Semiconductor integrated circuit device Physics 18 Expired
US7667218B2 Semiconductor integrated circuit device and method of manufacturing the same Electricity 17 Expired
US7206216B2 Semiconductor device with a non-erasable memory and/or a nonvolatile memory Physics 17 Expired
US7335907B2 Memory device Physics 16 Expired
US7859896B2 Semiconductor device Physics 14 Expired
US8427865B2 Semiconductor storage device Physics 12 Active
US7470923B2 Semiconductor integrated circuit device Electricity 12 Expired
US6538945B2 Sense amplifiers having reduced Vth deviation Electricity 10 Expired
US7796426B2 Semiconductor device Physics 10 Active
US6900492B2 Integrated circuit device with P-type gate memory cell having pedestal contact plug and peripheral circuit Electricity 8 Expired
US8000126B2 Semiconductor device with recording layer containing indium, germanium, antimony and tellurium Electricity 8 Active
US7638786B2 Semiconductor and semiconductor manufacturing arrangements having a chalcogenide layer formed of columnar crystal grains perpendicular to a main substrate surface Electricity 7 Expired
US7829930B2 Semiconductor device with ion movement control Physics 6 Active
US6399453B2 Process of manufacturing semiconductor integrated circuit device having an amorphous silicon gate Electricity 6 Expired
US7767997B2 Semiconductor device with solid electrolyte switching Electricity 5 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.