Highly integrated phase change memory device having micro-sized diodes and method for manufacturing the same
US8129708B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2008 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Jul 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A highly integrated phase change memory device and a method for manufacturing the same is disclosed. The highly integrated phase change memory device includes a semiconductor substrate having a cell area and a peripheral area with impurity regions formed in the cell area and extending in parallel to each other in a first direction to form a striped pattern. A gate electrode is formed in the peripheral area and dummy gate electrodes are formed in the cell area and extending in a second direction perpendicular to the first direction of the impurity regions. An interlayer dielectric layer pattern exposes portions of the cell area and the peripheral area and a PN diode is formed in a space defined by a pair of dummy gate electrodes and a pair of interlayer dielectric layer patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.