Nonvolatile memory device
US8129709B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2009 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Feb 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
A nonvolatile memory device (21) is provided with a semiconductor substrate, a plurality of active regions (3) formed on the semiconductor substrate and extending in a band, a plurality of select active elements (23) formed in the active regions (3) and having a first impurity diffusion region and a second impurity diffusion region, a plurality of first electrodes (13) electrically connected to the first impurity diffusion region, a variable resistance layer (12) electrically connected to the first electrodes (13), and a plurality of second electrodes electrically connected to the variable resistance layer (12). Among the plurality of first electrodes (13) and the plurality of second electrodes, an array direction of at least one pair of the first electrodes (13) and the second electrodes that are electrically connected to the same variable resistance layer (12), and a direction of extension of the activation regions (3) are not parallel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.