Plasmon enhanced nanowire light emitting diode
US8129710B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Oct 31, 2008 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Dec 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/818
Abstract
A nanowire light emitting diode (LED) and method of emitting light employ a plasmonic mode. The nanowire LED includes a nanowire having a semiconductor junction, a shell layer coaxially surrounding the nanowire, and an insulating layer, which is plasmonically thin, isolating the shell layer from the nanowire. The shell layer supports a surface plasmon that couples to the semiconductor junction by an evanescent field. Light is generated in a vicinity of the semiconductor junction and the surface plasmon is coupled to the semiconductor junction during light generation. The coupling enhances one or both of an efficiency of light emission and a light emission rate of the LED. A method of making the nanowire LED includes forming the nanowire, providing the insulating layer on the surface of the nanowire, and forming the shell layer on the insulating layer in the vicinity of the semiconductor junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.