Semiconductor device and method of manufacturing the same
US8129775B2 · kind B2 · utility
2Cited by
0References
11Claims
0Family size
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Key dates
| Filing date | Dec 3, 2009 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Jul 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
The semiconductor device has a stacked structure in which a tunnel oxide layer, a charge trapping layer, a blocking oxide layer, and a gate electrode are sequentially formed on a silicon substrate, wherein the blocking oxide layer includes a crystalline layer disposed adjacent to the charge trapping layer and an amorphous layer disposed adjacent to the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.