HOT process STI in SRAM device and method of manufacturing
US8129790B2 · kind B2 · utility
3Cited by
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3Claims
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Key dates
| Filing date | Mar 13, 2009 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Mar 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/00
Abstract
A structure and method for forming SRAMs on HOT substrates with STI is described. Logic circuits may also be fabricated on the same chip with some devices on the SOI regions and other devices on the SOI regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.