Magnetic memory device
US8129806B2 · kind B2 · utility
3Cited by
0References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2010 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Feb 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device includes a magnetic tunnel junction (MTJ) structure and an electrode embedded in a dielectric structure. The MTJ structure includes a free layer. The electrode is formed of silicon-germanium and is electrically connected to the MTJ. The electrode heats the free layer to reduce the coercive force of the free layer to reduce a critical current density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.