Inventor · Yongin-si, KR

Sechung Oh

50Patents
7h-index
50Co-inventors
71Inventor score

Filing activity: Aug 12, 2009 → Oct 21, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US8345474B2 Magnetic memory devices including magnetic layers having different products of saturated magnetization and thickness and related methods Physics 48 Active
US8692342B2 Magnetic memory devices having a uniform perpendicular nonmagnetic metal rich anisotropy enhanced pattern Electricity 37 Active
US8476722B2 Magnetic memory device Electricity 15 Active
US9496488B2 Semiconductor devices and methods of fabricating the same Electricity 9 Active
US8445979B2 Magnetic memory devices including magnetic layers separated by tunnel barriers Electricity 8 Active
US9048412B2 Magnetic memory devices including magnetic layers separated by tunnel barriers Electricity 7 Active
US9570670B2 Magnetic device and method of fabricating the same Electricity 7 Active
US9318695B2 Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced pattern Electricity 6 Active
US8405173B2 Magnetic memory devices Electricity 5 Active
US9997699B2 Semiconductor device having magnetic tunnel junction structure and method of fabricating the same Electricity 5 Active
US9761795B2 Method and processing apparatus for fabricating a magnetic resistive random access memory device Electricity 5 Active
US8445981B2 Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming a perpendicular magnetic film of the same Physics 4 Active
US9583697B2 Magnetic memory devices and methods of forming the same Electricity 4 Active
US9842637B2 Magnetic memory device and method of fabricating the same Electricity 4 Active
US8198102B2 Methods of fabricating magnetic memory devices with thin conductive bridges Electricity 4 Active
US8847341B2 Magnetic memory device Electricity 3 Active
US8129806B2 Magnetic memory device Electricity 3 Active
US9166144B2 Magnetic devices having perpendicular magnetic tunnel junction Electricity 3 Active
US8772846B2 Magnetic tunneling junction devices, memories, memory systems, and electronic devices Electricity 3 Active
US9691967B2 Magnetic memory devices having perpendicular magnetic tunnel structures therein Electricity 2 Active
US8987850B2 Magnetic memory devices having a uniform perpendicular nonmagnetic rich antisotropy enhanced pattern Electricity 2 Active
US9660187B1 Methods of forming a layer and methods of manufacturing magnetic memory devices using the same Electricity 2 Active
US9299923B2 Magnetic devices having perpendicular magnetic tunnel junction Electricity 2 Active
US8575667B2 Magnetic memory devices with thin conductive bridges Electricity 2 Active
US8722211B2 Magnetic memory devices and methods of manufacturing such magnetic memory devices Emerging Cross-Sectional Technologies 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.