Flexible word-line pulsing for STT-MRAM
US8130535B2 · kind B2 · utility
4Cited by
6References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2009 |
| Grant date | Mar 6, 2012 |
| Priority date | — |
| Expiry date | Mar 4, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/56012
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for generating a variable pulse width signal on an integrated circuit (IC) chip, includes receiving a first clock signal on the IC chip and receiving a second clock signal on the IC chip having a variable delay relative to the first clock signal. A signal having a rising edge triggered by a rising edge of the first clock signal and a falling edge triggered by a rising edge of the second clock signal is output. The output signal is provided to circuitry on the chip, such as a magnetoresistive junction (MTJ) cell of a spin torque transfer magnetic random access memory (STT-MRAM).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.