Formation of photoconductive and photovoltaic films
US8133364B2 · kind B2 · utility
1Cited by
1References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 6, 2008 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Jul 24, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24942
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present application discloses a method and system of depositing a lead selenide film onto another material. The lead selenide film may used in a photoconductive application or a photovoltaic application. Furthermore, the applications may be responsive to infrared radiation at ambient temperature. In one embodiment, a method includes sputtering the lead selenide film, performing a sensitization process, and applying a passivation film. In one exemplary embodiment, a p-n junction is formed by directly adhering a lead selenide film to a silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.