Method for modifying insulating or semi-conductive surfaces, and resulting products
US8133549B2 · kind B2 · utility
6Cited by
13References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2006 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Sep 22, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08J2323/10
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
The present invention relates to the use of a R—N2+ diazonium salt carrying an aromatic group R, for grafting of the aromatic group onto insulating, semiconductor, binary or ternary compound or composite material surfaces, the diazonium salt being present at a concentration close to its solubility limit, notably at a concentration higher than 0.05 M, and preferably varying between approximately 0.5 M to approximately 4 M.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.