SOI radio frequency switch with enhanced electrical isolation

US8133774B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Alan B. Botula · South Burlington, US
• Alvin J. Joseph · Williston, US
• Edward J. Nowak · South Burlington, US
• Yun Shi · South Burlington, US
• James A. Slinkman · Montpelier, US

Key dates

• Filing date: Mar 26, 2009
• Grant date: Mar 13, 2012
• Expiry date: Feb 17, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

At least one conductive via structure is formed from an interconnect-level metal line through a middle-of-line (MOL) dielectric layer, a shallow trench isolation structure in a top semiconductor layer, and a buried insulator layer to a bottom semiconductor layer. The shallow trench isolation structure laterally abuts at least two field effect transistors that function as a radio frequency (RF) switch. The at least one conductive via structure and the at interconnect-level metal line may provide a low resistance electrical path from the induced charge layer in a bottom semiconductor layer to electrical ground, discharging the electrical charge in the induced charge layer. The discharge of the charge in the induced charge layer thus reduces capacitive coupling between the semiconductor devices and the bottom semiconductor layer, and thus secondary coupling between components electrically disconnected by the RF switch is reduced.