Programmable metallization memory cell with planarized silver electrode

US8134138B2 · kind B2 · utility

Assignee

• Seagate Technology LLC · US

Inventors

• Tian Wei · Chengdu, CN
• Dexin Wang · Eden Prairie, US
• Venugopalan Vaithyanathan · Bloomington, US
• Yang Dong · Cleveland Heights, US
• Muralikrishnan Balakrishnan · Eden Prairie, US
• Ivan Petrov Ivanov · Apple Valley, US
• Ming Sun · San Jose, US
• Dimitar V. Dimitrov · Edina, US

Key dates

• Filing date: Jan 30, 2009
• Grant date: Mar 13, 2012
• Expiry date: Nov 16, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8416
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.