Photodiode with a reduced dark current and method for the production thereof

US8134179B2 · kind B2 · utility

Assignee

• austriamicrosystems AG

Inventors

• Jochen Kraft · Bruck an der Mur, AT
• Bernhard Löffler · Gleisdorf, AT
• Gerald Meinhardt · Graz, AT

Key dates

• Filing date: Apr 28, 2006
• Grant date: Mar 13, 2012
• Expiry date: Nov 15, 2026

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

A photodiode in which a pn junction is formed between the doped region (DG) formed in the surface of a crystalline semiconductor substrate and a semiconductor layer (HS) deposited above said doped region. An additional doping (GD) is provided in the edge region of the doped zone, by means of which additional doping the pn junction is shifted deeper into the substrate (SU). With the greater distance of the pn junction from defects at phase boundaries that is achieved in this way, the dark current within the photodiode is reduced.