Triggered silicon controlled rectifier for RF ESD protection
US8134211B2 · kind B2 · utility
5Cited by
9References
32Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 14, 2009 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Sep 14, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49117
Abstract
An ESD protection circuit has a polysilicon bounded SCR connected between a signal input/output interface contact of the integrated circuit and a power supply connection of the integrated circuit and a biasing circuit. The biasing circuit is connected to the polysilicon bounded SCR to bias the polysilicon bounded SCR to turn on more rapidly during the ESD event. The biasing circuit is formed by at least one polysilicon bounded diode and a first resistance. Other embodiments of the biasing circuit include a resistor/capacitor biasing circuit and a second diode triggering biasing circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.