Phase change memory devices and systems, and related programming methods
US8134866B2 · kind B2 · utility
44Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2010 |
| Grant date | Mar 13, 2012 |
| Priority date | — |
| Expiry date | Sep 16, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0078
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method programs a phase change memory device. The method comprises receiving program data for selected memory cells; generating bias voltages based on reference cells; sensing read data stored in a selected memory cell by supplying the selected memory cell with verification currents determined by the bias voltages; determining whether the read data is identical to the program data; and upon determining that the program data for one or more of the selected memory cells is not identical to the corresponding read data, iteratively applying a write current to the one or more selected memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.