Abrasive, method of polishing target member and process for producing semiconductor device
US8137159B2 · kind B2 · utility
1Cited by
29References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2011 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | Aug 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.