Epitaxial growth of ZnO with controlled atmosphere
US8137458B2 · kind B2 · utility
5Cited by
8References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 8, 2008 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | Jul 2, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A ZnO crystal growth method has the steps of (a) preparing a substrate having a surface capable of growing ZnO crystal exposing a Zn polarity plane; (b) supplying Zn and O above the surface of the substrate by alternately repeating a Zn-rich condition period and an O-rich condition period; and (c) supplying conductivity type determining impurities above the surface of the substrate while Zn and O are supplied at the step (b).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.