Method and system for fracturing a pattern using charged particle beam lithography with multiple exposure passes which expose different surface area
US8137871B2 · kind B2 · utility
34Cited by
7References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2009 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | Oct 12, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, in which the union of shots from one of a plurality of exposure passes is different than the union of shots from a different exposure pass. Methods for manufacturing a reticle and for manufacturing an integrated circuit are also disclosed, in which the union of shots from one of a plurality of charged particle beam exposure passes is different than the union of shots from a different exposure pass.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.