Asymmetric finFET device with improved parasitic resistance and capacitance

US8138030B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Josephine B. Chang · Mahopac, US
• Leland Chang · New York, US
• Chung-Hsun Lin · White Plains, US
• Jeffrey W. Sleight · Ridgefield, US

Key dates

• Filing date: Sep 15, 2009
• Grant date: Mar 20, 2012
• Expiry date: Mar 31, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/024
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a fin field effect transistor (finFET) device includes, forming a fin structure in a substrate, forming a gate stack structure perpendicular to the fin structure, and implanting ions in the substrate at an angle (θ) to form a source region and a drain region in the substrate, wherein the angle (θ) is oblique relative to the source region.