Method for forming integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels
US8138035B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2011 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | Feb 28, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/982
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of forming an integrated circuit device that includes a plurality of multiple gate FinFETs (MuGFETs) is disclosed. Fins of different crystal orientations for PMOS and NMOS MuGFETs are formed through amorphization and crystal regrowth on a direct silicon bonded (DSB) hybrid orientation technology (HOT) substrate. PMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (110) crystal orientations. NMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (100) crystal orientations in a Manhattan layout with the sidewall channels of the different PMOS and NMOS MuGFETs aligned at 0° or 90° rotations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.