Metal oxide alloy layer, method of forming the metal oxide alloy layer, and methods of manufacturing a gate structure and a capacitor including the metal oxide alloy layer
US8138057B2 · kind B2 · utility
2Cited by
8References
20Claims
0Family size
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Key dates
| Filing date | Aug 22, 2008 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | Jan 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal oxide alloy layer comprises a first layer including a first metal oxide and having a first thickness, and a second layer formed on the first layer, the second layer including a second metal oxide and having a second thickness, wherein a value of the first thickness is such that the first metal oxide is allowed to move into the second layer and a value of the second thickness is such that the second metal oxide is allowed to move into the first layer to form a single-layered structure in which the first and second metal oxides are mixed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.