Patent · US Active

Electrical coupling of wafer structures

US8138062B2 · kind B2 · utility

16Cited by

3References

20Claims

0Family size

Assignee

Freeescale Semiconductor, Inc. · US

Inventors

Lianjun Liu · Gilbert, US
Lisa H. Karlin · Chandler, US
Alan J. Magnus · Gilbert, US

Key dates

Filing date	Dec 15, 2009
Grant date	Mar 20, 2012
Priority date	—
Expiry date	Mar 8, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/16788
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for electrically coupling a first wafer with a second wafer is provided. The method includes bonding the first wafer with the second wafer using a bonding material. The method further includes forming an opening in the first wafer in a scribe area of the second wafer to expose a surface of a conductive structure of the second wafer. The method further includes forming a conductive layer overlying the first wafer and the opening in the first wafer such that the conductive layer forms an electrical contact with the conductive structure of the second wafer thereby electrically coupling the first wafer with the second wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.