Plasma processing apparatus and plasma processing method
US8138445B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2007 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | Jan 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32082
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.