MOSFET on silicon-on-insulator REDX with asymmetric source-drain contacts
US8138547B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2009 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | Jan 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/647
Abstract
A semiconductor device is disclosed that includes a silicon-on-insulator substrate including a buried insulator layer and an overlying semiconductor layer. Source extension and drain extension regions are formed in the semiconductor layer. A deep drain region and a deep source region are formed in the semiconductor layer. A first metal-semiconductor alloy contact layer is formed using tilted metal formation at an angle tilted towards the source extension region, such that the source extension region has a metal-semiconductor alloy contact that abuts the substrate from the source side, as a Schottky contact therebetween and the gate shields metal deposition from abutting the deep drain region. A second metal-semiconductor alloy contact is formed located on the first metal-semiconductor layer on each of the source extension region and drain extension region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.