Semiconductor device and method of forming low voltage MOSFET for portable electronic devices and data processing centers
US8138558B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2010 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | Sep 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/33523
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a well region formed within a substrate. A gate structure is formed over a surface of the substrate. A source region is formed within the substrate adjacent to the gate structure. A drain region is formed within the substrate adjacent to the gate structure. A first clamping region and second clamping region below the source region and drain region. A trench is formed through the source region. The trench allows the width of the source region to be reduced to 0.94 to 1.19 micrometers. A plug is formed through the trench. A source tie is formed through the trench over the plug. An interconnect structure is formed over the source region, drain region, and gate structure. The semiconductor device can be used in a power supply to provide a low voltage to electronic equipment such as a portable electronic device and data processing center.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.