Multiple measurement techniques including focused beam scatterometry for characterization of samples
US8139232B2 · kind B2 · utility
17Cited by
9References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 27, 2007 |
| Grant date | Mar 20, 2012 |
| Priority date | — |
| Expiry date | Oct 26, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/8438
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A system for monitoring thin-film fabrication processes is herein disclosed. Diffraction of incident light is measured and the results are compared to a predictive model based on at least one idealized or nominal structure. The model and/or the measurement of diffracted incident light may be modified using the output of one or more additional metrology systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.