Method and system for measuring in patterned structures
US8142965B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 7, 2008 |
| Grant date | Mar 27, 2012 |
| Priority date | — |
| Expiry date | Mar 3, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70683
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A sample having a patterned area and a method for use in controlling a pattern parameter is presented. The sample comprises at least one test structure having a patterned region similar to a pattern in the patterned area, the patterns in the patterned area and in the at least test structure being produced by the same patterning process. The at least one test structure comprises at least one pattern parameter of a predetermined value intentionally increased above a natural value of said certain parameter induced by a patterning process. By this, the natural value of the parameter induced by the patterning process can be determined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.