ZnO based semiconductor device and its manufacture method
US8143618B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Feb 17, 2009 |
| Grant date | Mar 27, 2012 |
| Priority date | — |
| Expiry date | Jul 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn—Si—O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.